? 2005 ixys all rights reserved g = gate d = drain s = source tab = drain ds99250b(04/05) polarhv tm power mosfet ixtq 22n60p v dss = 600 v ixtv 22n60p i d25 = 22 a ixtv 22n60ps r ds(on) 330 m ? ? ? ? ? n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-3p (ixtq) g d s (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 330 m ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 600 v v gs continuous 20 v v gsm tranisent 30 v i d25 t c = 25 c22a i dm t c = 25 c, pulse width limited by t jm 66 a i ar t c = 25 c22a e ar t c = 25 c40mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c plastic body for 10 s 250 c m d mounting torque (to-3p) 1. 13/10 nm/lb.in. weight to-3p 6 g plus220 & plus220smd 5.0 g preliminary data sheet g s plus220smd (ixtv_s) g s d plus220 (ixtv) d (tab) d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixtq 22n60p ixtv 22n60p ixtv 22n60ps symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 15 21 s c iss 3600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 305 pf c rss 38 pf t d(on) 20 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 20 ns t d(off) r g = 4 ? (external) 60 ns t f 23 ns q g(on) 105 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 25 nc q gd 55 nc r thjc 0.31 k/w r thck (to-3p) 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 22 a i sm repetitive 66 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 22a -di/dt = 100 a/ s v r = 100v q rm 410 4.0 ns c to-3p (ixtq) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 d1 l l3 l1 e1 e e b d c a2 a1 a l2 terminals: 1 - gate 2 - drain 3 - source tab - drain e1 e l2 d l3 l l1 3x b 2x e c a2 a1 a e1 d1 plus220 (ixtv) outline l l3 l2 l1 a1 e1 e d1 e b d c a2 a a3 l4 terminals: 1 - gate 2 - drain 3 - source tab - drain e e1 d l2 a a1 l1 l l3 e 2x b c a2 l4 a3 e1 plus220smd
? 2005 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 45 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 9v 8v 6v 7.5v 7v 6.5v fig. 3. output characteristics @ 125 o c 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 1214 1618 20 v d s - volts i d - amperes v gs = 10v 8v 7v 5.5v 5v 6v 6.5v fig. 1. output characteristics @ 25 o c 0 2 4 6 8 10 12 14 16 18 20 22 0123456789 v d s - volts i d - amperes v gs = 10v 8v 7v 6v 7.5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 22a i d = 11a v gs = 10v fig. 6. drain current vs. case temperature 0 4 8 12 16 20 24 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 5 10 15 20 25 30 35 40 45 i d - amperes r d s ( o n ) - normalize d t j = 125 o c t j = 25 o c v gs = 10v ixtq 22n60p ixtv 22n60p ixtv 22n60ps
ixys reserves the right to change limits, test conditions, and dimensions. fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100110 q g - nanocoulombs v g s - volts v ds = 300v i d = 11a i g = 10ma fig. 7. input admittance 0 3 6 9 12 15 18 21 24 27 30 4.555.566.577.58 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 3 6 9 12 15 18 21 24 27 30 0 3 6 9 12 15 18 21 24 27 30 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 1 10 100 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds(on) limit 10ms 25 s ixtq 22n60p ixtv 22n60p ixtv 22n60ps
? 2005 ixys all rights reserved fig. 13. m axim um trans ie nt the rm al re s is tance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - o c / w ixtq 22n60p ixtv 22n60p ixtv 22n60ps
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